For reprofiling, SiC wet/dry sandpaper is VERY SLOW on S30V (been there, done that). With sandpaper, the abrasive layer is too shallow, the grit will break down very quickly and the paper will quickly load up & clog with swarf. So, it slows down EVERYTHING in at least 3 different ways. And even the thin paper backing of sandpaper tends to cushion the grit, so it's not as aggressive as done with a hard stone. AND, the relatively small size of the hone backing it means the paper will exhaust itself that much faster and will need replacing very frequently.
Assuming you have a Coarse diamond hone as part of that system, I'd stick with that. If not using the WS system at all, a bench stone (8" x 2" or larger) in Coarse SiC or XC diamond would be more ideal for reprofiling S30V.
As earlier suggested, maybe doing a little at a time, in subsequent sharpenings, would be the better approach.