- Joined
- Sep 2, 2006
- Messages
- 16,703
Hmmm.
What you do is compute the local electric field component of the EMP burst.
Then you examine the object, taking into account screening and the conductive circuitry as antennas (or effective antenna apertures).
You then compute the likely coupling, both direct and induced. This gives you the instantaneous voltage induced by the EMP at various locations in the circuit.
Usually, since the induced voltage doesn't persist too long, you just worry about p-n junctions in electronic devices. When the instantaneous induced voltage is too high, it punches holes in these junctions, ruining the electronic devices.
A good, strong EMP ... say induced by a high altitude nuclear burst ... can produce strong enough fields over long enough periods of time to do more than simply blow through silicon chips. But that's what we mostly worry about.
Perhaps that helps. A bit.
What you do is compute the local electric field component of the EMP burst.
Then you examine the object, taking into account screening and the conductive circuitry as antennas (or effective antenna apertures).
You then compute the likely coupling, both direct and induced. This gives you the instantaneous voltage induced by the EMP at various locations in the circuit.
Usually, since the induced voltage doesn't persist too long, you just worry about p-n junctions in electronic devices. When the instantaneous induced voltage is too high, it punches holes in these junctions, ruining the electronic devices.
A good, strong EMP ... say induced by a high altitude nuclear burst ... can produce strong enough fields over long enough periods of time to do more than simply blow through silicon chips. But that's what we mostly worry about.
Perhaps that helps. A bit.